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| ON Semiconductort High-Power PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. 2N6437 2N6438 * *ON Semiconductor Preferred Device * High Collector-Emitter Sustaining Voltage -- * * * VCEO(sus) = 100 Vdc (Min) -- 2N6437 = 120 Vdc (Min) -- 2N6438 High DC Current Gain -- hFE = 20-80 @IC = 10 Adc = 12 (Min) @ IC = 25 Adc Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) Complement to NPN 2N6339 thru 2N6341 25 AMPERE POWER TRANSISTORS PNP SILICON 100, 120 VOLTS 200 WATTS * CASE 1-07 TO-204AA (TO-3) II I IIIIIIIIIIIIIIIIIIIIIII II II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II II I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II III I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III III I I I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Collector-Base Voltage Emitter-Base Voltage Symbol VCB VEB IC IB VCEO 2N6437 120 100 2N6438 140 120 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage 6.0 25 50 10 Collector Current -- Continuous Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.14 Watts W/_C _C TJ,Tstg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 0.875 _C/W (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 April, 2001 - Rev. 2 Publication Order Number: 2N6437/D 2N6437 2N6438 200 PD, POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 2N6437 2N6438 0 - 11 V 10 s tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME ( s) III I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) VCEO(sus) 2N6437 2N6438 2N6437 2N6438 100 120 -- -- -- -- -- -- -- -- -- -- -- ICEO Adc 50 50 Collector Cutoff Current (VCE = 110 Vdc, VBE(off) = -1.5 Vdc) (VCE = 130 Vdc, VBE(off) = -1.5 Vdc) (VCE = 100 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) (VCE = 120 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 140 Vdc, IE = 0) ICEX Adc 2N6437 2N6438 2N6437 2N6438 2N6437 2N6438 10 10 1.0 1.0 10 10 mAdc Adc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) DC Current Gain (1) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) IEBO hFE 100 Adc -- ON CHARACTERISTICS 30 20 12 -- -- -- -- -- 120 -- 1.0 1.8 1.8 2.5 -- Collector-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz) fT 40 -- -- -- -- MHz pF s s s Cob tr tf 700 0.3 1.0 SWITCHING CHARACTERISTICS Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc) Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) ts Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) 0.25 *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s; Duty Cycle v 2.0%. VCC + 80 V RC 8.0 OHMS + 9.0 V RB = 10 OHMS MBR74 5 - 5.0 V SCOPE 0.3 0.2 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 tr td @ VBE(off) = 6.0 V VCC = 80 V IC/IB = 10 TJ = 25C NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time http://onsemi.com 3 2N6437 2N6438 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 t2 P(pk) ZJC(t) = r(t)RJC RJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 ms 5.0 ms 200 s dc TJ = 200C 0.02 BELOW RATED VCEO 0.01 2.0 3.0 5.0 7.0 10 20 BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (SINGLE PULSE) PULSE DUTY CYCLE v 10% SECOND BREAKDOWN LIM ITED CURVES APPLY 30 2N6437 2N6438 50 70 100 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 3.0 2.0 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 tf ts 4000 3000 2000 CAPACITANCE (pF) Cob Cib TJ = 25C VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C 1000 700 500 300 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 4 2N6437 2N6438 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 TJ = 150C hFE, DC CURRENT GAIN 100 70 50 30 20 10 VCE = 2.0 V VCE = 4.0 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 + 25C -55C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 IC = 2.0 A 5.0 A 10 A TJ = 25C 20 A Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.3 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.3 0.5 0.7 1.0 VB FOR VBE -55C to + 25C 2.0 3.0 5.0 7.0 10 20 30 *VC FOR VCE(sat) -55C to +25C +25C to +150C *APPLIES FOR IC/IB v hFE @ VCE + 2.0 V 2 +25C to +150C VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 102 IC, COLLECTOR CURRENT ( A) 101 101 TJ = +150C +100C IB , BASE CURRENT ( A) 100 10-1 10-2 10-3 10-4 +0.16 +25C REVERSE FORWARD 0 -0.08 -0.16 -0.24 TJ = +150C +100C VCE = 40 V 100 10-1 10-2 10-3 +0.2 REVERSE VCE = 40 V FORWARD +25C +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 +0.08 VBE, BASE EMITTER VOLTAGE (VOLTS) VBE, BASE EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region http://onsemi.com 5 2N6437 2N6438 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 2N6437 2N6438 Notes http://onsemi.com 7 2N6437 2N6438 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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